1 publication date: december 2003 sjj00001bed composite transistors up0411x series silicon pnp epitaxial planar type for switching/digital circuits features ? two elements incorporated into one package (transistors with built-in resistor) ? reduction of the mounting area and assembly cost by one half resistance by part number marking symbol (r 1 )(r 2 ) ? up04111 9u 10 k ? 10 k ? ? UP04113 6s 47 k ? 47 k ? ? up04116 6u 4.7 k ?? absolute maximum ratings t a = 25 c unit: mm (0.30) 0.10 0.02 654 123 5? 5? 0.20 +0.05 ?.02 1.60 0.05 0.55 0.05 0.10 max. 0 to 0.02 (0.20) 1.60 0.05 display at no.1 lead 1.20 0.05 (0.20) 1.00 0.05 (0.50)(0.50) r 1 r 2 r 1 r 2 4 tr1 tr2 5 6 1 3 2 parameter symbol rating unit collector-base voltage (emitter open) v cbo ? 50 v collector-emitter voltage (base open) v ceo ? 50 v collector current i c ? 100 ma total power dissipation p t 125 mw junction temperature t j 125 c storage temperature t stg ? 55 to + 125 c internal connection 1: emitter (tr1) 4: emitter (tr2) 2: base (tr1) 5: base (tr2) 3: collector (tr2) 6: collector (tr1) ssmini6-f1 package
up0411x series 2 sjj00001bed parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = ? 10 a, i e = 0 ? 50 v collector-emitter voltage (base open) v ceo i c = ? 2 ma, i b = 0 ? 50 v collector-base cutoff current (emitter open) i cbo v cb = ? 50 v, i e = 0 ? 0.1 a collector-emitter cutoff current (base open) i ceo v ce = ? 50 v, i b = 0 ? 0.5 a emitter-base cutoff current up04111 i ebo v eb = ? 6 v, i c = 0 ? 0.5 ma (collector open) UP04113 ? 0.1 up04116 ? 0.01 forward current transfer up04111 h fe v ce = ? 10 v, i c = ? 5 ma 35 ? ratio UP04113 80 up04116 160 460 collector-emitter saturation voltage v ce(sat) i c = ? 10 ma, i b = ? 0.3 ma ? 0.25 v output voltage high-level v oh v cc = ? 5 v, v b = ? 0.5 v, r l = 1 k ?? 4.9 v output voltage low-level v ol v cc = ? 5 v, v b = ? 2.5 v, r l = 1 k ?? 0.2 v UP04113 v cc = ? 5 v, v b = ? 3.5 v, r l = 1 k ? input resistance up04111 r 1 ? 30% 10 + 30% k ? UP04113 47 up04116 4.7 resistance ratio up04111 r 1 / r 2 0.8 1.0 1.2 ? UP04113 transition frequency f t v cb = ? 10 v, i e = 1 ma, f = 200 mhz 80 mhz electrical characteristics t a = 25 c 3 c note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.
up0411x series 3 sjj00001bed p t ? t a 0 0 160 40 120 80 150 25 50 75 100 125 total power dissipation p t ( mw ) ambient temperature t a ( c ) i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o common characteristics chart characteristics charts of up04111 0 0 ? 12 ? 2 ? 10 ? 4 ? 8 ? 6 ? 120 ? 80 collector-emitter voltage v ce ( v ) collector current i c ( ma ) ? 40 t a = 25 c i b = ? 1.0 ma ? 0.9 ma ? 0.8 ma ? 0.7 ma ? 0.6 ma ? 0.5 ma ? 0.4 ma ? 0.3 ma ? 0.2 ma ? 0.1 ma ? 10 ? 3 ? 1 ? 10 ? 2 ? 10 ? 1 ? 1 ? 10 ? 10 ? 100 ? 1 000 collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) i c / i b = 10 t a = 75 c 25 c ? 25 c 0 ? 0.1 ? 1 ? 10 ? 100 ? 1 000 forward current transfer ratio h fe collector current i c ( ma ) 40 80 120 v ce = ? 10 v t a = 75 c 25 c ? 25 c 0.1 0 1 10 100 1 000 ? 20 ? 10 ? 30 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) f = 1 mhz t a = 25 c ? 1 ? 1.0 ? 10 ? 10 2 ? 10 3 ? 10 4 ? 2.0 ? 1.8 ? 1.6 ? 1.4 ? 1.2 output current i o ( a ) input voltage v in ( v ) v o = ? 5 v t a = 25 c ? 0.01 ? 0.1 ? 0.1 ? 1 ? 10 ? 100 ? 1 ? 10 ? 100 input voltage v in ( v ) output current i o ( ma ) v o = ? 0.2 v t a = 25 c
up0411x series 4 sjj00001bed i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o characteristics charts of UP04113 0 0 ? 12 ? 2 ? 10 ? 4 ? 8 ? 6 ? 120 collector-emitter voltage v ce ( v ) collector current i c (m a ) ? 80 ? 40 i b = ? 1.0 ma ? 0.1 ma ? 0.2 ma ? 0.3 ma ? 0.4 ma ? 0.5 ma ? 0.6 ma ? 0.7 ma ? 0.8 ma ? 0.9 ma t a = 25 c ? 0.01 ? 0.1 ? 1 ? 10 ? 10 ? 100 v ce = ? 10 v ? 1 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 ? 1 ? 10 ? 100 50 100 150 200 250 ? 1 000 v ce = ? 10 v 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) t a = 75 c 0.1 1 10 0 ? 10 ? 20 ? 30 f = 1 mhz t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) ? 1.0 ? 1.2 ? 1.4 ? 1.6 ? 1.8 ? 2.0 v o = ? 5 v t a = 25 c output current i o ( a ) input voltage v in ( v ) ? 10 ? 10 2 ? 10 3 ? 10 4 ? 0.1 ? 0.1 ? 100 ? 1 ? 10 ? 100 input voltage v in ( v ) output current i o ( ma ) v o = ? 0.2 v t a = 25 c ? 1 ? 10
up0411x series 5 sjj00001bed i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o characteristics charts of up04116 0 0 ? 12 ? 2 ? 10 ? 4 ? 8 ? 6 ? 40 ? 80 ? 160 ? 120 collector-emitter voltage v ce ( v ) collector current i c ( ma ) t a = 25 c i b = ? 1.0 ma ? 0.9 ma ? 0.8 ma ? 0.7 ma ? 0.6 ma ? 0.5 ma ? 0.4 ma ? 0.3 ma ? 0.2 ma ? 0.1 ma ? 0.01 ? 1 ? 0.1 ? 1 ? 10 ? 100 ? 10 ? 100 ? 1 000 collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) i c / i b = 10 t a = 75 c 25 c ? 25 c 0 ? 1 ? 10 ? 100 ? 1 000 forward current transfer ratio h fe collector current i c ( ma ) 100 200 300 v ce = ? 10 v t a = 75 c 25 c ? 25 c 0.1 0 1 10 100 1 000 ? 20 ? 10 ? 30 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) f = 1 mhz t a = 25 c ? 1 ? 0.4 ? 10 ? 100 ? 2.4 ? 2.0 ? 1.6 ? 1.2 ? 0.8 output current i o ( ma ) input voltage v in ( v ) v o = ? 5 v t a = 25 c ? 0.01 ? 1 ? 0.1 ? 1 ? 10 ? 100 ? 10 ? 100 input voltage v in ( v ) output current i o ( ma ) v o = ? 0.2 v t a = 25 c
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